bsz120p03ns3 g opti mos tm p3 power-transistor features ? single p-channel in s3o8 ? qualified according jedec 1) for target applications ? 150 c operating temperature ? v gs =25 v, specially suited for notebook applications ? pb-free; rohs compliant ? applications: battery management, load switching ? halogen-free according to iec61249-2-21 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =70 c t a =25 c 2) pulsed drain current i d,pulse t c =25 c 3) avalanche energy, single pulse e as i d =-20 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t a =25 c w t a =25 c 2) operating and storage temperature t j , t stg c esd class jesd22-a114 hbm soldering temperature c iec climatic category; din iec 68-1 1) j-std20 and jesd22 55/150/56 -55 ? 150 25 2.1 -11.0 52 260 value 73 -160 -40.0 -40 1b (500v - 1kv) pg-tsdson-8 120p3n pg-tsdson-8 v ds -30 v r ds(on),max 12 m ? i d -40 a product summary bsz120p03ns3 g package type marking lead free packing yes non-dry halogen free yes rev. 2.1 page 1 2009-11-16
bsz120p03ns3 g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 2.4 k/w thermal resistance, junction - ambient r thja 6 cm 2 cooling area 2) --60 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a -30 - - v gate threshold voltage v gs(th) v ds = v gs , i d =-73 a -3.1 -2.5 -1.9 zero gate voltage drain current i dss v ds =-30 v, v gs =0 v, t j =25 c - - -1 a v ds =-30 v, v gs =0 v, t j =125 c - - -100 gate-source leakage current i gss v gs =-25 v, v ds =0 v - - -100 na drain-source on-state resistance r ds(on) v gs =-6 v, i d =-20 a - 12.0 20.0 m ? v gs =-10 v, i d =-20 a - 9.0 12.0 gate resistance r g - 2.2 - ? transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-20 a 22 36 - s 2) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. values 3) see fig. 3 for more detailed information rev. 2.1 page 2 2009-11-16
bsz120p03ns3 g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 2240 3360 pf output capacitance c oss - 1090 1635 reverse transfer capacitance c rss - 74 111 turn-on delay time t d(on) -1320ns rise time t r -1117 turn-off delay time t d(off) -2335 fall time t f -58 gate char g e characteristics 3) gate to source charge q gs -1117nc gate charge at threshold q g(th) -46 gate to drain charge q gd -58 switching charge q sw -1320 gate charge total q g -3045 gate plateau voltage v plateau - 4.6 - v output charge q oss v dd =-15 v, v gs =0 v -2538nc reverse diode diode continous forward current i s - - 40 a diode pulse current i s,pulse - - 160 diode forward voltage v sd v gs =0 v, i f =-20 a, t j =25 c - - -1.1 v reverse recovery time t rr v r =15 v, i f =| i s |, d i f /d t =100 a/s -47-ns reverse recovery charge q rr -55-nc t c =25 c values v gs =0 v, v ds =-15 v, f =1 mhz v dd =-15 v, v gs =- 10 v, i d =-20 a, r g =6 ? v dd =-15 v, i d =20 a, v gs =0 to -10 v rev. 2.1 page 3 2009-11-16
bsz120p03ns3 g 1 power dissipation 2 drain current p tot =f( t c ); t p 10 s i d =f( t c ); | v gs | 10 v; t p 10 s 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c 1) ; d =0 z thjs =f( t p ) parameter: t p parameter: d = t p / t 1 s 100 s 1 ms 10 ms dc 10 2 10 1 10 0 10 -1 10 2 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 100 1000 0.1 1 10 100 -v ds [v] -i d [a] limited by on-state resistance 10 s single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 10 0 10 -1 10 -2 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t p [s] z thjs [k/w] 0 10 20 30 40 50 60 0 40 80 120 160 t c [c] p tot [w] 0 4 8 12 16 20 24 28 32 36 40 44 48 0 40 80 120 160 t c [c] -i d [a] rev. 2.1 page 4 2009-11-16
bsz120p03ns3 g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -4.5 v -5.0 v - 6 v -10 v 0 5 10 15 20 25 30 35 40 0 10203040 -i d [a] r ds(on) [m ? ] -4.0 v 25 c 150 c 0 10 20 30 40 50 60 0123456 -v gs [v] -i d [a] 0 10 20 30 40 50 0102030 -i d [a] g fs [s] -3.5 v -3.7 v -4.0 v -4.2v -4.5 v -5.0 v -10 v 0 10 20 30 40 0123 -v ds [v] -i d [a] rev. 2.1 page 5 2009-11-16
bsz120p03ns3 g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-20 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-73 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 4 6 8 10 12 14 16 18 20 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m ? ] ciss coss crss 10 4 10 3 10 2 10 1 0 5 10 15 20 25 30 -v ds [v] c [pf] typ. min. max. 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 t j [c] -v gs(th) [v] 25 c, typ 150 c, typ 25 c, 98% 150 c, 98% 0.1 1 10 100 0 0.5 1 1.5 -v sd [v] i f [a] rev. 2.1 page 6 2009-11-16
bsz120p03ns3 g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-20 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a -6 v -15 v -24 v 0 1 2 3 4 5 6 7 8 9 10 0102030 -q gate [nc] -v gs [v] 26 28 30 32 -60 -20 20 60 100 140 180 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 2 10 1 10 0 t av [s] -i av [a] rev. 2.1 page 7 2009-11-16
bsz120p03ns3 g package outline pg-tsdson-8 dimensions in mm rev. 2.1 page 8 2009-11-16
bsz120p03ns3 g published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.1 page 9 2009-11-16
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